Thermal–mechanical constitutive relations for bulk, single-crystal, wurtzite gallium nitride (GaN) at elevated temperatures, suitable for modeling crystal growth processes, are presented. A crystal plasticity model that considers slip and the evolution of mobile and immobile dislocation densities on the prismatic and basal slip systems is developed. The experimental stress–strain data from Yonenaga and Motoki (2001, “Yield Strength and Dislocation Mobility in Plastically Deformed Bulk Single-Crystal GaN,” J. Appl. Phys., 90(12), pp. 6539–6541) for GaN is analyzed in detail and used to define model parameters for prismatic slip. The sensitivity to the model parameters is discussed and ranges for parameters are given. Estimates for basal slip are also provided.
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January 2015
Research-Article
Constitutive Relations for Modeling Single Crystal GaN at Elevated Temperatures
Antoinette Maniatty,
Antoinette Maniatty
1
Professor
Fellow ASME
Department of Mechanical, Aerospace, and
Nuclear Engineering,
e-mail: maniaa@rpi.edu
Fellow ASME
Department of Mechanical, Aerospace, and
Nuclear Engineering,
Rensselaer Polytechnic Institute
,Troy, NY 12180-3590
e-mail: maniaa@rpi.edu
1Corresponding author.
Search for other works by this author on:
Payman Karvani
Payman Karvani
Mem. ASME
Department of Mechanical, Aerospace, and
Nuclear Engineering,
e-mail: paymaan@gmail.com
Department of Mechanical, Aerospace, and
Nuclear Engineering,
Rensselaer Polytechnic Institute
,Troy, NY 12180-3590
e-mail: paymaan@gmail.com
Search for other works by this author on:
Antoinette Maniatty
Professor
Fellow ASME
Department of Mechanical, Aerospace, and
Nuclear Engineering,
e-mail: maniaa@rpi.edu
Fellow ASME
Department of Mechanical, Aerospace, and
Nuclear Engineering,
Rensselaer Polytechnic Institute
,Troy, NY 12180-3590
e-mail: maniaa@rpi.edu
Payman Karvani
Mem. ASME
Department of Mechanical, Aerospace, and
Nuclear Engineering,
e-mail: paymaan@gmail.com
Department of Mechanical, Aerospace, and
Nuclear Engineering,
Rensselaer Polytechnic Institute
,Troy, NY 12180-3590
e-mail: paymaan@gmail.com
1Corresponding author.
Contributed by the Materials Division of ASME for publication in the JOURNAL OF ENGINEERING MATERIALS AND TECHNOLOGY. Manuscript received April 28, 2014; final manuscript received August 8, 2014; published online September 24, 2014. Assoc. Editor: Irene Beyerlein.
J. Eng. Mater. Technol. Jan 2015, 137(1): 011002 (7 pages)
Published Online: September 24, 2014
Article history
Received:
April 28, 2014
Revision Received:
August 8, 2014
Citation
Maniatty, A., and Karvani, P. (September 24, 2014). "Constitutive Relations for Modeling Single Crystal GaN at Elevated Temperatures." ASME. J. Eng. Mater. Technol. January 2015; 137(1): 011002. https://doi.org/10.1115/1.4028441
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