Skip Nav Destination
Close Modal
Update search
Filter
- Title
- Author
- Author Affiliations
- Full Text
- Abstract
- Keyword
- DOI
- ISBN
- ISBN-10
- ISSN
- EISSN
- Issue
- Journal Volume Number
- References
- Conference Volume Title
- Paper No
Filter
- Title
- Author
- Author Affiliations
- Full Text
- Abstract
- Keyword
- DOI
- ISBN
- ISBN-10
- ISSN
- EISSN
- Issue
- Journal Volume Number
- References
- Conference Volume Title
- Paper No
Filter
- Title
- Author
- Author Affiliations
- Full Text
- Abstract
- Keyword
- DOI
- ISBN
- ISBN-10
- ISSN
- EISSN
- Issue
- Journal Volume Number
- References
- Conference Volume Title
- Paper No
Filter
- Title
- Author
- Author Affiliations
- Full Text
- Abstract
- Keyword
- DOI
- ISBN
- ISBN-10
- ISSN
- EISSN
- Issue
- Journal Volume Number
- References
- Conference Volume Title
- Paper No
Filter
- Title
- Author
- Author Affiliations
- Full Text
- Abstract
- Keyword
- DOI
- ISBN
- ISBN-10
- ISSN
- EISSN
- Issue
- Journal Volume Number
- References
- Conference Volume Title
- Paper No
Filter
- Title
- Author
- Author Affiliations
- Full Text
- Abstract
- Keyword
- DOI
- ISBN
- ISBN-10
- ISSN
- EISSN
- Issue
- Journal Volume Number
- References
- Conference Volume Title
- Paper No
NARROW
Format
Article Type
Subject Area
Topics
Date
Availability
1-2 of 2
Keywords: ion implantation
Close
Follow your search
Access your saved searches in your account
Would you like to receive an alert when new items match your search?
Sort by
Journal Articles
Publisher: ASME
Article Type: Technical Briefs
J. Heat Mass Transfer. September 2010, 132(9): 094503.
Published Online: July 15, 2010
...Michael H. Rausch; Alfred Leipertz; Andreas P. Fröba Our recent experimental studies indicate that nanostructured, chemically inhomogeneous surfaces are the origin of dropwise condensation of steam on ion implanted metals. Yet, the underlying microscopic mechanism governing this special...
Journal Articles
Publisher: ASME
Article Type: Research Papers
J. Heat Mass Transfer. February 2010, 132(2): 023301.
Published Online: November 30, 2009
...S. Basu; B. J. Lee; Z. M. Zhang This paper describes an experimental investigation on the infrared radiative properties of heavily doped Si at room temperature. Lightly doped Si wafers were ion-implanted with either boron or phosphorus atoms, with dosages corresponding to as-implanted peak doping...
