To improve performance and reliability of integrated circuits, accurate knowledge of thermal transport properties must be possessed. In particular, reduced dimensions increase boundary scattering and the significance of thermal contact resistance. A thermoreflectance measurement can be used with a valid heat transport model to experimentally quantify the contact thermal resistance of thin film interconnects. In the current work, a quasi-steady state thermoreflectance measurement is used to determine the temperature distribution of a thin film gold interconnect (100 nm) undergoing Joule heating. By comparing the data to a heat transport model accounting for thermal diffusion, dissipation, and Joule heating, a measure of the thermal dissipation or overall thermal resistance of unit area is obtained. The gold film to substrate overall thermal resistance of unit area beneath the wide lead (10 μm) and narrow line (1 μm) of the interconnect are 1.64 × 10−6 m2 K/W and 5.94 × 10−6 m2 K/W, respectively. The thermal resistance of unit area measurements is comparable with published results based on a pump-probe thermoreflectance measurement.
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November 2012
This article was originally published in
Journal of Heat Transfer
Research-Article
Thermoreflectance Measurement of Temperature and Thermal Resistance of Thin Film Gold
Christopher Cardenas,
Christopher Cardenas
1
e-mail: CVCardenas@gmail.com
1Corresponding author.
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Shawn Tokairin,
Shawn Tokairin
Department of Mechanical Engineering,
Santa Clara University
,500 El Camino Real
,Santa Clara, CA 95053
;Center for Nanostructures,
Santa Clara University,
500 El Camino Real,
Santa Clara, CA 95053
Search for other works by this author on:
Cary Y. Yang
Cary Y. Yang
Department of Electrical Engineering,
Santa Clara University,
500 El Camino Real,
Santa Clara, CA 95053
;Center for Nanostructures,
Santa Clara University,
500 El Camino Real,
Santa Clara, CA 95053
Search for other works by this author on:
Christopher Cardenas
e-mail: CVCardenas@gmail.com
Shawn Tokairin
Department of Mechanical Engineering,
Santa Clara University
,500 El Camino Real
,Santa Clara, CA 95053
;Center for Nanostructures,
Santa Clara University,
500 El Camino Real,
Santa Clara, CA 95053
Cary Y. Yang
Department of Electrical Engineering,
Santa Clara University,
500 El Camino Real,
Santa Clara, CA 95053
;Center for Nanostructures,
Santa Clara University,
500 El Camino Real,
Santa Clara, CA 95053
1Corresponding author.
Contributed by the Heat Transfer Division of ASME for publication in the JOURNALOF HEAT TRANSFER. Manuscript received May 16, 2011; final manuscript received May 28, 2012; published online September 26, 2012. Assoc. Editor: Kenneth Goodson.
J. Heat Transfer. Nov 2012, 134(11): 111401 (7 pages)
Published Online: September 28, 2012
Article history
Received:
May 16, 2011
Revision Received:
May 28, 2012
Citation
Cardenas, C., Fabris, D., Tokairin, S., Madriz, F., and Yang, C. Y. (September 28, 2012). "Thermoreflectance Measurement of Temperature and Thermal Resistance of Thin Film Gold." ASME. J. Heat Transfer. November 2012; 134(11): 111401. https://doi.org/10.1115/1.4007068
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