An atomistic Green’s function method is developed to simulate phonon transport across a strained germanium (or silicon) thin film between two semi-infinite silicon (or germanium) contacts. A plane-wave formulation is employed to handle the translational symmetry in directions parallel to the interfaces. The phonon transmission function and thermal conductance across the thin film are evaluated for various atomic configurations. The contributions from lattice straining and material heterogeneity are evaluated separately, and their relative magnitudes are characterized. The dependence of thermal conductance on film thickness is also calculated, verifying that the thermal conductance reaches an asymptotic value for very thick films. The thermal boundary resistance of a single interface is computed and agrees well with analytical model predictions. Multiple-interface effects on thermal resistance are investigated, and the results indicate that the first few interfaces have the most significant effect on the overall thermal resistance.
Skip Nav Destination
tsfisher@purdue.edu
Article navigation
Research Papers
Simulation of Interfacial Phonon Transport in Si–Ge Heterostructures Using an Atomistic Green’s Function Method
W. Zhang,
W. Zhang
School of Mechanical Engineering, Birck Nanotechnology Center,
Purdue University
, West Lafayette, IN 47907
Search for other works by this author on:
T. S. Fisher,
T. S. Fisher
School of Mechanical Engineering, Birck Nanotechnology Center,
tsfisher@purdue.edu
Purdue University
, West Lafayette, IN 47907
Search for other works by this author on:
N. Mingo
N. Mingo
NASA-Ames Center for Nanotechnology
, 229-1, Moffett Field, CA 94035
Search for other works by this author on:
W. Zhang
School of Mechanical Engineering, Birck Nanotechnology Center,
Purdue University
, West Lafayette, IN 47907
T. S. Fisher
School of Mechanical Engineering, Birck Nanotechnology Center,
Purdue University
, West Lafayette, IN 47907tsfisher@purdue.edu
N. Mingo
NASA-Ames Center for Nanotechnology
, 229-1, Moffett Field, CA 94035J. Heat Transfer. Apr 2007, 129(4): 483-491 (9 pages)
Published Online: May 30, 2006
Article history
Received:
December 15, 2005
Revised:
May 30, 2006
Citation
Zhang, W., Fisher, T. S., and Mingo, N. (May 30, 2006). "Simulation of Interfacial Phonon Transport in Si–Ge Heterostructures Using an Atomistic Green’s Function Method." ASME. J. Heat Transfer. April 2007; 129(4): 483–491. https://doi.org/10.1115/1.2709656
Download citation file:
Get Email Alerts
Cited By
Modulation of Heat Transfer in a Porous Burner Based on Triply Periodic Minimal Surface
J. Heat Mass Transfer (May 2023)
Heat Transfer Intensification of a Confined Impinging Air Jet Via a Guiding Baffle
J. Heat Mass Transfer (July 2023)
New Insights in Turbulent Heat Transfer With Oil and Hybrid Nano-Oils, Subject to Discrete Heating, for Parabolic Trough Absorbers
J. Heat Mass Transfer (August 2023)
Related Articles
Monte
Carlo Study of Phonon Heat Conduction in Silicon Thin Films Including Contributions of Optical
Phonons
J. Heat Transfer (May,2010)
Modeling of Thermoelectric Properties of Semi-Conductor Thin Films With Quantum and Scattering Effects
J. Heat Transfer (April,2007)
From the Casimir Limit to Phononic Crystals: 20 Years of Phonon Transport Studies Using Silicon-on-Insulator Technology
J. Heat Transfer (June,2013)
In-Plane and Out-Of-Plane Thermal Conductivity of Silicon Thin Films Predicted by Molecular Dynamics
J. Heat Transfer (November,2006)
Related Proceedings Papers
Related Chapters
Insulating Properties of W-Doped Ga2O3 Films Grown on Si Substrate for Low-K Applications
International Conference on Advanced Computer Theory and Engineering, 4th (ICACTE 2011)
Validation of Elekta iViewGT A-Si EPID Model for Pre-Treatment Dose Verification of IMRT Fields
International Conference on Advanced Computer Theory and Engineering, 4th (ICACTE 2011)
Simulation of Plasma Discharges in Plasma Enhanced Chemical Vapor Deposition for Microcrystalline Silicon Films
International Conference on Electronics, Information and Communication Engineering (EICE 2012)