... state, and immediately following annealing. The metallization remained stable following subjection to a temperature of 400 ° C for 100 h in air. diffusion barriers electron spectroscopy electronics packaging metallisation silicon compounds thermal conductivity thermal expansion tungsten...

... flip-chip devices gold alloys metallisation nickel alloys silver alloys solders substrates tin alloys electromigration reliability flip-chip solder joint substrate pad metallization An earlier version of this paper was published in Proceedings of 56th Electronic Components...

... of the package was 892 h, and the average ultimate service time of the package was 1053 h. 17 08 2004 13 01 2005 metallisation reliability integrated circuit packaging reflow soldering testing tin aluminium alloys nickel alloys vanadium alloys copper alloys dies (machine tools...

... adhesion metallisation fatigue tensile testing humidity life testing A common failure mechanism of polyimide dielectric is deadhesion by aging-assisted fatigue. Fatigue crack growth results from thermo-mechanical and hygroscopic stresses induced by changes in the temperature and humidity...

... packaging metallisation thermal conductivity finite element analysis stress analysis thermal expansion substrates modelling internal stresses Semiconductor laser diodes are the primary components of various optoelectronic applications. Unlike the ordinary semiconductors, a laser...