Fractional Fringe Moire´ Interferometry (FFMI)—a new experimental methodology to measure accurately deformations and consequently strains—has been successfully implemented to determine thermally induced strains in a specimen made from an AT&T 1MB DRAM device. The specimen was heated uniformly from room temperature to 90° C. Resulting moire´ fringe patterns were recorded, analyzed using digital-image-processing and in plane displacements in the device were determined. Strain components were computed by simple differentiation of the displacement fields. The technique proved to be successful in detecting full displacement fields with submicron resolution. Contour maps showing actual thermo/mechanical strain components in the specimen were constructed. Those maps can provide an excellent tool realistic for strain analysis of microelectronic devices regardless of the structural and material complexity.
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December 1990
Research Papers
Thermal Strain Measurements in Electronic Packages Through Fractional Fringe Moire´ Interferometry
A. F. Bastawros,
A. F. Bastawros
Homer Research Laboratories, Bethlehem Steel Corporation, Bethlehem, Pa 18016
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A. S. Voloshin
A. S. Voloshin
Department of Mechanical Engineering, Lehigh University, Bethlehem, Pa 18015
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A. F. Bastawros
Homer Research Laboratories, Bethlehem Steel Corporation, Bethlehem, Pa 18016
A. S. Voloshin
Department of Mechanical Engineering, Lehigh University, Bethlehem, Pa 18015
J. Electron. Packag. Dec 1990, 112(4): 303-308 (6 pages)
Published Online: December 1, 1990
Article history
Received:
June 28, 1990
Revised:
October 14, 1990
Online:
April 28, 2008
Citation
Bastawros, A. F., and Voloshin, A. S. (December 1, 1990). "Thermal Strain Measurements in Electronic Packages Through Fractional Fringe Moire´ Interferometry." ASME. J. Electron. Packag. December 1990; 112(4): 303–308. https://doi.org/10.1115/1.2904382
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