This paper discusses a specially developed semiconductor strain cell that allows sensitive measurement of surface strain in environments with temperatures up to 1050F (566C). There is an unmet industry-wide need in the manufacturing and power generation fields for monitoring material mechanics and component degradation at temperatures exceeding the maximum working temperature of traditional strain gage technologies. This technology advances attachment methodology of the semiconductor gage to allow field deployment and a physically reliable interface with structural strain. Measuring strain at these temperatures is useful both in the laboratory and in practical monitoring applications. The technology provides a way to monitor changes in materials exposed to heat and stress and give plant engineers tools to predict and avoid critical failures.
- Pressure Vessels and Piping Division
Development of High Temperature Semiconductor Strain Gages for Thermal Power Plant Applications
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Suprock, CA, Christian, JJ, & Rosinski, ST. "Development of High Temperature Semiconductor Strain Gages for Thermal Power Plant Applications." Proceedings of the ASME 2018 Pressure Vessels and Piping Conference. Volume 7: Operations, Applications, and Components. Prague, Czech Republic. July 15–20, 2018. V007T07A002. ASME. https://doi.org/10.1115/PVP2018-84137
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