Part II of this paper describes an experimental and analytical study of crack propagation in SnPb and SnAgCu solder joints in 357-PBGA packages exposed to 30-minute thermal cycles of 0 to 100°C. Experimental results show that cracks propagate faster at the package interface than at the board interface; secondary cracks from at the package interface, but grow much slower than the primary cracks; and crack growth rates in SnPb joints are about 50% larger than in SnAgCu joints. A crack propagation model, developed using the fracture mechanics approach, calculates the energy release rate at the crack tip. Using this rate and experimental crack length data, crack propagation rates were computed. Simulation results show the effects of solder type and aging conditions on crack propagation rates and the effects of the number of cracks in a joint on crack propagation life.
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ASME 2003 International Mechanical Engineering Congress and Exposition
November 15–21, 2003
Washington, DC, USA
Conference Sponsors:
- Electronic and Photonic Packaging Division
ISBN:
0-7918-3714-9
PROCEEDINGS PAPER
Modeling and Analysis of Crack Growth in SnPb and SnAgCu Solder Joints in PBGA Packages: Part II — Crack Propagation
Donghyun Kim,
Donghyun Kim
University of Texas at Austin, Austin, TX
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Glenn Y. Masada,
Glenn Y. Masada
University of Texas at Austin, Austin, TX
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Tess J. Moon
Tess J. Moon
University of Texas at Austin, Austin, TX
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Donghyun Kim
University of Texas at Austin, Austin, TX
Andrew Mawer
Motorola, Inc., Austin, TX
Glenn Y. Masada
University of Texas at Austin, Austin, TX
Tess J. Moon
University of Texas at Austin, Austin, TX
Paper No:
IMECE2003-43237, pp. 515-521; 7 pages
Published Online:
May 12, 2008
Citation
Kim, D, Mawer, A, Masada, GY, & Moon, TJ. "Modeling and Analysis of Crack Growth in SnPb and SnAgCu Solder Joints in PBGA Packages: Part II — Crack Propagation." Proceedings of the ASME 2003 International Mechanical Engineering Congress and Exposition. Electronic and Photonic Packaging, Electrical Systems and Photonic Design, and Nanotechnology. Washington, DC, USA. November 15–21, 2003. pp. 515-521. ASME. https://doi.org/10.1115/IMECE2003-43237
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