A linked facility between an ion accelerator and STM enabled to elucidate cascade damage process experimentally with an atomistic scale.

By adjusting experimental conditions, we have successfully attained very clear images of Si (111) surface irradiated by very low-flux and stable ion beams. We can obtain the information of displacement damage produced by one injected ion. Much higher density of defects is observed than the number of injected ions throughout the area of the image, indicating that there are processes for defect formation other than direct collision with injected particles.

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