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Technical Brief

A Highly Efficient Thin Film CuInGaSe2 Solar Cell

[+] Author and Article Information
M. Doriani

Research Laboratory for Fabrication
of Advanced Semiconductor Devices,
Department of Communications and Electronics,
School of Electrical and Computer Engineering,
Shiraz University,
Shiraz 71936-16511, Iran
e-mail: maral.doriani@yahoo.com,

H. Dehdashti Jahromi

Research Laboratory for Fabrication
of Advanced Semiconductor Devices,
Department of Communications and Electronics,
School of Electrical and Computer Engineering,
Shiraz University,
Shiraz 71936-16511, Iran
e-mail: dehdashti@shirazu.ac.ir

M. H. Sheikhi

Research Laboratory for Fabrication
of Advanced Semiconductor Devices,
Department of Communications and Electronics,
School of Electrical and Computer Engineering,
Shiraz University,
Shiraz 71936-16511, Iran
e-mail: msheikhi@shirazu.ac.ir

1Corresponding author.

Contributed by the Solar Energy Division of ASME for publication in the JOURNAL OF SOLAR ENERGY ENGINEERING: INCLUDING WIND ENERGY AND BUILDING ENERGY CONSERVATION. Manuscript received September 20, 2014; final manuscript received June 21, 2015; published online September 2, 2015. Editor: Robert F. Boehm.

J. Sol. Energy Eng 137(6), 064501 (Sep 02, 2015) (5 pages) Paper No: SOL-14-1273; doi: 10.1115/1.4031211 History: Received September 20, 2014; Revised June 21, 2015

A new structure for CuIn1−xGaxSe2 (CIGS) solar cell is investigated. The structure consists of an absorber layer with constant bandgap placed next to the cadmium sulfide (CdS) buffer layer and a graded bandgap absorber layer positioned near the molybdenum (Mo) back contact. This leads to a reduced recombination rate at the back contact and enhances collection of generated carriers by additional induced drift field. The structure provides higher efficiency than previous structures. Optimum value of bandgap, thickness, and doping level of the layers are determined to reach maximum efficiency. Moreover, a trap density model is interpolated and applied in the simulations.

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References

Figures

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Fig. 1

General structure of the CIGS solar cell

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Fig. 2

Solar spectrum and response of CIGS materials

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Fig. 3

Trap density model for CIGS material

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Fig. 4

I–V characteristics of the simulated solar cell with total absorber thickness of 1 μm

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Fig. 5

Efficiency trend as a function of CdS thickness

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Fig. 6

Efficiency trend for different thickness of the constant bandgap layer

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Fig. 7

Efficiency as a function of the thickness of graded bandgap layer

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Fig. 8

I–V characteristics of the solar cell for different acceptor concentration of the constant bandgap layer

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Fig. 9

Efficiency trend as a function of the acceptor concentration of the constant bandgap layer

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Fig. 10

Efficiency as a function of acceptor concentration of the graded bandgap layer

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