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Research Papers

Plasma-Texturing Processes and a-Si:H Surface Passivation on c-Si Wafers for Photovoltaic Applications

[+] Author and Article Information
D. Murias

The National Institute of Astrophysics,
Optics and Electronics (INAOE),
San Andres Cholula 72840, Mexico;
Luis Enrique Erro No. 1,
Santa María Tonantzintla,
San Andres Cholula C.P. 72840, Puebla, Mexico
e-mail: murias@inaoep.mx

M. Moreno

The National Institute of Astrophysics,
Optics and Electronics (INAOE),
San Andres Cholula 72840, Mexico;
Calle Luis Enrique Erro No. 1,
Santa María Tonantzintla,
San Andres Cholula C.P. 72840, Puebla, Mexico

C. Reyes-Betanzo, A. Torres, P. Rosales, J. Martínez, I. Vivaldo

The National Institute of Astrophysics,
Optics and Electronics (INAOE),
San Andres Cholula 72840, Mexico;
Luis Enrique Erro No. 1,
Santa María Tonantzintla,
San Andres Cholula C.P. 72840, Puebla, Mexico

R. Ambrosio

Meritorious Autonomous University of Puebla
Puebla 72570, Mexico;
Department of Electronics,
BUAP,
Av. San Claudio S/N,
Jardines de San Manuel,
Puebla 72570, Mexico

P. Roca i Cabarrocas

Laboratory of Physics of Interfaces and Thin Films,
Ecole Polytechnique,
CNRS,
Palaiseau 91128, France

Contributed by the Solar Energy Division of ASME for publication in the JOURNAL OF SOLAR ENERGY ENGINEERING: INCLUDING WIND ENERGY AND BUILDING ENERGY CONSERVATION. Manuscript received December 1, 2014; final manuscript received July 15, 2015; published online August 4, 2015. Editor: Robert F. Boehm.

J. Sol. Energy Eng 137(5), 051010 (Aug 04, 2015) (6 pages) Paper No: SOL-14-1359; doi: 10.1115/1.4031105 History: Received December 01, 2014

In this work, we report the formation of pyramidlike structures on crystalline silicon (c-Si) substrates using plasma-texturing processes, and also, we present optimized process conditions for the deposition of hydrogenated amorphous silicon in order to passivate low cost CZ c-Si wafers. A relatively high effective lifetime of minority carriers was measured on nontextured wafers. Our results demonstrate that plasma-texturing processes can produce similar results or even better than wet-texturing processes. Finally, combined plasma texturing and passivation at low temperature is a promising approach for the fabrication of low cost heterojunction solar cells in CZ c-Si substrates.

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References

Figures

Grahic Jump Location
Fig. 1

Diffuse reflectance as a function of the wavelength of different textured c-Si surfaces processed by SF6/O2 plasma varying chamber pressure

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Fig. 2

SEM images of different textured c-Si surfaces processed by SF6/O2 plasma

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Fig. 3

Diffuse reflectance of a c-Si wafer textured by a solution composed of KOH/IPA/DI water. The inset shows that an SEM image of the pyramids formed in the c-Si wafer surface.

Grahic Jump Location
Fig. 4

Three-dimensional images obtained by AFM of different c-Si wafer surfaces textured by SF6/O2 plasma

Grahic Jump Location
Fig. 5

Average diffuse reflectance as function of the root mean square roughness

Grahic Jump Location
Fig. 6

Effective lifetime as function of the carrier density for some selected process of passivation, varying the SiH4 flow used

Grahic Jump Location
Fig. 7

Effective lifetime as function of the carrier density for some selected process of passivation varying plasma exposure time

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