Review Article

Effect of the Back Surface Reflector and Passivated Rear Contacts With PERT Solar Cells

[+] Author and Article Information
Nordine Sahouane

IIIrd Generation Solar Cells Team,
Materials and Renewable Energies Research Unit,
University of Abou Bekr Belkaid,
Tlemcen 13000, Algeria
Unité de Recherche en Energies Renouvelables
en Milieu Saharien (U.R.E.R_MS) d'Adrar,
Centre de développement des Energies
Renouvelables (C.D.E.R),
Adrar 01000, Algérie
e-mail: Nordine_84@yahoo.fr

Abdellatif Zerga

IIIrd Generation Solar Cells Team,
Materials and Renewable Energies Research Unit,
University of Abou Bekr Belkaid,
Tlemcen 13000, Algeria
e-mail: a_zerga@yahoo.fr

Zeggai Oussama

Materials and Renewable Energies Research Unit,
University of Abou BekrBelkaid,
Tlemcen 13000, Algeria
e-mail: zeggai_oussama@yahoo.com

1Corresponding author.

Contributed by the Solar Energy Division of ASME for publication in the JOURNAL OF SOLAR ENERGY ENGINEERING: INCLUDING WIND ENERGY AND BUILDING ENERGY CONSERVATION. Manuscript received December 14, 2014; final manuscript received May 24, 2015; published online June 30, 2015. Editor: Robert F. Boehm.

J. Sol. Energy Eng 137(5), 050801 (Jun 30, 2015) (6 pages) Paper No: SOL-14-1376; doi: 10.1115/1.4030780 History: Received December 14, 2014

We use Silvaco software (atlas tcad) simulation to investigate the effect of dielectric layer deposed on rear surface of solar cells passivated emitter and rear totally diffused (PERT). For an improved performance for this solar cell, several physical factors must be considered, such as the light trapping behavior, and the resulting passivation performance and rear surface recombination currents were investigated. Particular consideration will be given to the back surface reflector (BSR) impact on reflection surface, interface passivation, and on the I–V characteristics. Numerical simulations show that using a layer of two dielectrics (SiNx/SiO2) with optical indices and thickness optimized in combination with contacts located (optimized metallization fraction f) at the rear surface allow for energy conversion efficiencies of 21.26% compared to a single layer of dielectric SiN 21.01%.

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Grahic Jump Location
Fig. 2

PERT solar cell elementary structure

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Fig. 1

Illustration of the modeled silicon solar cell textured and rear totally diffused (PERT cell)

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Fig. 3

Reflection as a function of wavelengths

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Fig. 4

Simulation of the reflectivity of the back face depending on the wavelength for dielectric thicknesses SiN (a) and SiO2 (b) with optical indices SiN (nSiNx = 1.9 and nSiO2 = 1.45, respectively

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Fig. 5

Reflectivity of the rear face is a function of the wavelength for different thickness of the SiNx/SiO2 stack

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Fig. 6

Simulation SRV Seff as a function of the metallization fraction f of silicon wafers

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Fig. 7

EQE and IQE and reflectivity of PERT solar cells

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Fig. 8

EQE and IQE curves of SiO2/SiNx passivated PERT solar cells stabilized and degraded



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