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Research Papers

A Circuit-Based Approach to Simulate the Characteristics of a Silicon Photovoltaic Module With Aging

[+] Author and Article Information
R. Doumane, M. Balistrou

LEMI,
Université M'Hamed Bougara,
Avenue de l'Indépendance,
Boumerdès 35000, Algeria

P. O. Logerais

CERTES,
Université Paris-Est,
IUT de Sénart,
rue Georges Charpak,
Lieusaint 77567, France
e-mail: pierre-olivier.logerais@u-pec.fr

O. Riou, J. F. Durastanti

CERTES,
Université Paris-Est,
IUT de Sénart,
rue Georges Charpak,
Lieusaint 77567, France

A. Charki

LASQUO-ISTIA,
Université d'Angers,
62 Avenue Notre Dame du Lac,
Angers 49000, France

1Corresponding author.

Contributed by the Solar Energy Division of ASME for publication in the JOURNAL OF SOLAR ENERGY ENGINEERING: INCLUDING WIND ENERGY AND BUILDING ENERGY CONSERVATION. Manuscript received October 18, 2014; final manuscript received December 17, 2014; published online February 18, 2015. Assoc. Editor: Santiago Silvestre.

J. Sol. Energy Eng 137(2), 021020 (Apr 01, 2015) (7 pages) Paper No: SOL-14-1307; doi: 10.1115/1.4029541 History: Received October 18, 2014; Revised December 17, 2014; Online February 18, 2015

The aging of photovoltaic modules results inevitably in a decrease of their efficiency all through their lifetime utilization. An approach to simulate the evolution of electrical characteristics of a photovoltaic module with aging is presented. The photovoltaic module is modeled by an equivalent electrical circuit whose components have time-dependent characteristics determined under accelerated tests. By entering sun irradiance and temperature, I–V and P–V curves as well as efficiency evolution can be simulated over years assuming equivalent time. The methodology is applied for the case of a monocrystalline photovoltaic module modeled by a one-diode circuit and aging laws are determined with experimental results of damp heat (DH) tests 85 °C/85% RH performed by Hulkoff (2009, “Usage of Highly Accelerated Stress Test (HAST) in Solar Module Aging Procedures,” M.S. thesis, Chalmers University of Technology, Göteborg, Sweden). A power degradation rate of 0.53%/yr is found. A parametric study shows that the rundown of optical transmittance of the upper layers with aging has the most important impact by reducing the initial efficiency by 11.5% over a 25-year exposure contrary to electrical degradations which cause a decrease of 1.85% of the initial efficiency.

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Figures

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Fig. 1

General modeling approach

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Fig. 2

Equivalent circuit of photovoltaic module with variable parameters to take into account aging

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Fig. 3

Aging laws based on the trends obtained with accelerated aging experimental results of Hulkoff in 2009 (DH test: 85 °C/85% RH) [37]: (a) optical transmittance, (b) maximum power, (c) series resistance, and (d) parallel resistance

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Fig. 4

Evolution of I–V characteristic in STC

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Fig. 5

Evolution of P–V characteristic in STC

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Fig. 6

Power degradation rate evolution in STC

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Fig. 7

Effect of the degradations on the I–V curves in STC: (a) optical transmittance, (b) series resistance, and (c) parallel resistance

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Fig. 8

Simulated efficiency loss according to each parameter and with all of them put together

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