Technical Brief

Preparation and Investigation of p-GaAs/n-Cd1-xZnxS1-yTey Heterojunctions Deposited by Electrochemical Deposition

[+] Author and Article Information
Huseyn M. Mamedov

Faculty of Physics,
Department of Physical Electronics,
Baku State University,
Z.Khalilov street, 23,
Baku Az1148, Azerbaijan
e-mail: mhhuseyng@gmail.com

Zoltan Konya

Department of Applied and
Environmental Chemistry,
University of Szeged,
H-6720 Szeged, Rerrich Bela ter 1.,
e-mail: konya@chem.u-szeged.hu

Mustafa B. Muradov

Faculty of Physics,
Nanomaterials Laboratory,
Baku State University,
Z.Khalilov street, 23,
Baku Az1148, Azerbaijan
e-mail: mbmuradov@gmail.com

Akos Kukovecz

Department of Applied and
Environmental Chemistry,
University of Szeged,
H-6720 Szeged, Rerrich Bela ter 1.,
e-mail: kakos@chem.u-szeged.hu

Krisztian Kordas

Microelectronics and Materials
Physics Laboratories,
University of Oulu,
P.O. Box 8000FI-90014, Oulu, Finland
e-mail: lapy@ee.oulu.fi

Daniel P. Hashim

Department of Mechanical Engineering and
Materials Science,
Rice University,
6100 Main Street, MS-321,
Houston, TX 77005
e-mail: danielpaul3@gmail.com

Vusal U. Mamedov

Faculty of Physics,
Department of Physical Electronics,
Baku State University,
Z.Khalilov street, 23,
Baku Az1148, Azerbaijan
e-mail: mammadovv@gmail.com

Contributed by the Solar Energy Division of ASME for publication in the JOURNAL OF SOLAR ENERGY ENGINEERING: Including Wind Energy and Building Energy Conservation. Manuscript received October 2, 2013; final manuscript received April 25, 2014; published online May 29, 2014. Assoc. Editor: Santiago Silvestre.

J. Sol. Energy Eng 136(4), 044503 (May 29, 2014) (4 pages) Paper No: SOL-13-1289; doi: 10.1115/1.4027694 History: Received October 02, 2013; Revised April 25, 2014

Anisotype heterojunctions of p-GaAs/n-Cd1-xZnxS1-yTey have been fabricated by preparing n-type Cd1-xZnxS1-yTey thin films onto p-GaAs single crystal wafers using an electrochemical deposition method. The voltammetric behavior of the Cd1-xZnxS1-yTey thin films on GaAs substrates from aqueous solutions was studied. Electrical and photoelectrical properties of heterojunctions were studied depending on the Cd1-xZnxS1-yTey films composition (x = 0.1 ÷ 0.8; y = 0.2; 0.4; 0.9) and heat treatment (HT) regime in argon atmosphere (100–450 °С during 3–16 min). Under AM1.5 conditions, the open-circuit voltage, short-circuit current, fill factor, and efficiency of our best cell, was Voc = 584 mV, Jsc = 14.54 mA/cm2, FF = 0.6, and η = 6.7%, respectively.

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Grahic Jump Location
Fig. 1

Dark J–V curves for as-deposited p-GaAs/CZSTE heterojunction

Grahic Jump Location
Fig. 2

Dependence of short-circuit current (Jsc), open-circuit voltage (Uoc), and power output (P) of the as-deposited p-GaAs/n-Cd1-xZnxS1-yTeу cells on the films composition

Grahic Jump Location
Fig. 3

Spectral dependences of the photocurrent for p-GaAs/n-Cd0.25Zn0.75S0.8Te0.2 heterojunctions before and after HT

Grahic Jump Location
Fig. 4

Dependence of p-GaAs/n-Cd0.25Zn0.75S0.8Te0.2 solar cell parameters on the heat treatment time and temperature




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