Research Papers

Study of the Effect of Luminescence Down-Shifting on GaAs Solar Cells With Several Optical Windows Layers

[+] Author and Article Information
Mahfoud Abderrezek

UDES, Solar Equipment Development
RN11 Bou-Ismail BP. 386,
Tipaza 42415, Algeria;
L.I.S Laboratory,
Department of Electronic,
Faculty of Technology,
Ferhat Abbas University,
SETIF 19000, Algeria
e-mail: mahfoud_cbi@yahoo.fr

Mohamed Fathi

UDES, Solar Equipment Development
RN11 Bou-Ismail BP. 386,
Tipaza 42415, Algeria
e-mail: dr_fathimohamed@yahoo.fr

Farid Djahli

L.I.S Laboratory,
Department of Electronic,
Faculty of Technology,
Ferhat Abbas University,
SETIF 19000, Algeria
e-mail: fdjahli@yahoo.fr

Mohammed Ayad

UDES, Solar Equipment Development
RN11 Bou-Ismail BP. 386,
Tipaza 42415, Algeria

Contributed by the Solar Energy Division of ASME for publication in the JOURNAL OF SOLAR ENERGY ENGINEERING. Manuscript received December 26, 2012; final manuscript received September 13, 2013; published online October 22, 2013. Assoc. Editor: Santiago Silvestre.

J. Sol. Energy Eng 136(1), 011014 (Oct 22, 2013) (5 pages) Paper No: SOL-12-1341; doi: 10.1115/1.4025593 History: Received December 26, 2012; Revised September 13, 2013

Luminescence down shifting (LDS) is an elegant approach used to improve the efficiency of single solar cells, in this approach, the photovoltaic (PV) glass material is replaced with a thin layer of polymer polymethyl methacrylate (PMMA) doped with optically active organic dyes. In this paper, we present a theoretical study. To assess the improvements introduced by LDS on an n-i-p-GaAs solar cells structure formed by diverse types of windows layers (Al0.8Ga0.2As, Al0.52In0.48P, and Ga0.5In0.5P). The performance of the solar cell is investigated as a function of organic dyes. It has been shown that the gain in power conversion efficiency attains values up to 5.79, 8.15, and 8.37% with Al0.8Ga0.2As, Al0.52In0.48P, and Ga0.5In0.5P in the standard spectrum AM1.5G, moreover, they increase the short circuit current density.

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Grahic Jump Location
Fig. 1

(a) Luminescence down-shifting principle. (b) n-i-p GaAs quantum efficiency.

Grahic Jump Location
Fig. 2

The structure of the n-i-p GaAs solar cell with LDS layer used for simulation

Grahic Jump Location
Fig. 3

The standard AM1.5G spectrum modification caused by the LDS layer (three samples S1, S2, and S3)

Grahic Jump Location
Fig. 5

The gain in short circuit current density and conversion efficiency of nip-GaAs with different window layers and samples used

Grahic Jump Location
Fig. 4

Simulation results of the short circuit current density and conversion efficiency variation with number of dyes add




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