Research Papers

Study of Fluorine-Doped TiO2 Sol-Gel Thin Coatings

[+] Author and Article Information
T. Giannakopoulou, N. Todorova

NCSR Demokritos, Institute of Materials Science, 153 10, Attica, Greece

T. Vaimakis

Department of Chemistry, University of Ioannina, 451 10, Ioannina, Greece

S. Ladas

Department of Chemical Engineering and FORTH-ICE∕HT, University of Patras, 265 04, Rion, Greece

C. Trapalis1

NCSR Demokritos, Institute of Materials Science, 153 10, Attica, Greece; Department of Product and Systems Design Engineering, University of Aegean, 841 00 Syros, Greecetrapalis@ims.demokritos.gr


Corresponding author.

J. Sol. Energy Eng 130(4), 041007 (Sep 05, 2008) (5 pages) doi:10.1115/1.2969804 History: Received November 27, 2007; Revised January 23, 2008; Published September 05, 2008

TiO2 is an excellent material for degradation of many environmental contaminants. Its photocatalytic activity is restricted by UV spectral region that can be extended to visible region using different doping techniques. Effect of fluorine-doping on the optical properties of sol-gel prepared TiO2 thin films is reported. Trifluoroacetic acid (CF3COOH) was used as fluorine source with starting concentrations of 5at.%, 10at.%, and 20at.% F to Ti. Gel films were deposited on SiO2∕soda lime glass substrates by dip-coating technique. After thermal treatment at 450°C fluorine containing TiO2 thin films were obtained. The crystallinity of the films was determined by X-ray diffraction (XRD). The X-ray photoemission spectrometry (XPS) was applied to determine valence state of the dopant and bonding element. The optical constants, namely, refractive index and the extinction coefficient, were obtained by fitting UV-visible theoretical transmittance curves to experimental ones. The simulated transmittance was calculated in the frames of the Forouhi–Bloomer (FB) dispersion model. The values of the FB energy band gap determined as onset of the absorption were compared with Tauc band gap values received by extrapolation of the linear part of the absorption edge. The XRD patterns reflect beginning of the anatase crystallization process. The XPS analysis reveals the presence of fluorine in the films in the form of titanium fluoride, titanium oxyfluorides, and nonstoichiometric TiO2xFx. The linear part of the absorption edge of TiO2 films for mentioned fluorine concentrations gives slightly increased values of Tauc band gap (3.7eV) than that for bulk TiO2(3.2eV). Also, its broadening at lower frequencies with a FB band gap 2.7eV is observed. The results show that, although the fluorine is incorporated in the TiO2 lattice, it does not affect the crystallinity and band gap of the formed TiO2 film for the FTi ratios used in the starting sols.

Copyright © 2008 by American Society of Mechanical Engineers
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Figure 1

XRD patterns of F-doped TiO2 films deposited on SiSL substrate from solutions containing different quantities fluorine precursor

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Figure 2

XPS spectra for Ti 2p (a), O 1s (b), and F 1s (c) regions of the F20 sample

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Figure 3

Measured UV-visible transmittance spectra for F-doped TiO2 samples and SiSL substrate

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Figure 4

Measured and calculated transmittance spectra for F20 sample

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Figure 5

Dispersion spectra of refraction index and extinction coefficient for F20 film

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Figure 6

Optical absorption function (α×E)1∕2 versus photon energy for F20 sample




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