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Technical Briefs

Characteristics of Global Solar Radiation Monitor Utilizing Solar Cells

[+] Author and Article Information
A. Ibrahim1 n2

Physics Department, Faculty of Science,  Tanta University, 31527 Tanta, Egyptali_02us@yahoo.com

M. R. I. Ramadan

Physics Department, Faculty of Science,  Tanta University, 31527 Tanta, Egyptali_02us@yahoo.com

1

Present address: Physics department, Faculty of Science, Northern Border University, KSA.

2

Corresponding author.

J. Sol. Energy Eng 134(1), 014503 (Nov 29, 2011) (4 pages) doi:10.1115/1.4004383 History: Received June 24, 2010; Revised May 25, 2011; Published November 29, 2011; Online November 29, 2011

This brief note examines the characteristics of solar cells from the standpoint of developing a global solar radiation monitor. The study is performed using a simplified photovoltaic test monitor manufactured, a single crystal p-type czochraliski (CZ) silicon solar cell of the construction n+ pp++ passivated emitter solar cell coupled to a fluke 73 digital multimeter. The short circuit current density (Jsc ) is examined during a complete test day from 8:40 AM to 7:40 PM. Subsequently, the test monitor is used for checking the accuracy of transfer operations of solar radiation. The results obtained by the test monitor utilizing solar cells are good due to: (a) it is simple in construction, (b) it exhibits a good response to all solar radiation variations, and (c) it works without an electric power supply.

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Figures

Grahic Jump Location
Figure 1

The variation of short current density Jsc, , the solar radiation Hx and cell temperature with time for a silicon solar cell of n+ pp++ construction of area 1 cm2 for a typical day of weathering conditions at Tanta latitude (30 deg 41′)

Grahic Jump Location
Figure 2

Variation of the short current density JSC with solar radiation H from 8:00 AM to 12:00 at noon for single crystal Silicon solar cell at Tanta latitude (30 deg 41′), Egypt

Grahic Jump Location
Figure 3

Variation of short current density JSC with solar radiation H from 12:00 at noon to 7:00 PM for single crystal Silicon solar cell at Tanta latitude (30 deg 41′), Egypt

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