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Research Papers

Analysis of the Ideality Factor of a-Si:H Solar Cells

[+] Author and Article Information
A. Al Tarabsheh1

Department of Electrical Engineering, Hashemite University, Zarqa 13115, Jordanatarabsheh@hu.edu.jo

I. Etier

Department of Electrical Engineering, Hashemite University, Zarqa 13115, Jordanatarabsheh@hu.edu.jo

1

Corresponding author.

J. Sol. Energy Eng 133(1), 011012 (Feb 03, 2011) (5 pages) doi:10.1115/1.4003294 History: Received May 16, 2010; Revised November 21, 2010; Published February 03, 2011; Online February 03, 2011

This paper analyzes the ideality factor of amorphous silicon (a-Si:H) solar cells as a function of both the thickness of the intrinsic layer and the applied voltage to the cells. The ideality factor in this work is extracted from the current/voltage characteristic that is calculated by solving the continuity and transport equations and taking into account the contributions of diffusion and drift currents for minority and majority carriers and, especially, the nonequality of mobilities and lifetimes of electrons and holes in a-Si:H solar cells.

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Copyright © 2011 by American Society of Mechanical Engineers
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Figures

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Figure 1

Sketch of the p-i-n structure under forward bias voltage V. The energy difference between the quasi-Fermi levels (dashed lines) EFn(W) and EFp(0) of electrons and holes equals the quantity qV, which reduces the energy difference (solid lines) between the p- and n-layers. The generated built-in voltage Vbi represents the energy difference between the p- and n-layers. The position separating region R1 from region R2 is X=XS.

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Figure 2

Calculated current density/voltage (J/V)-characteristics of an a-Si:H solar cell for different values of intrinsic layer thickness. The other modeling parameters are listed in Table 1.

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Figure 3

Contour plot of the error ε, where the optimum values of the ideality factor n and the saturation current density J0 are located where the error ε is globally minimum

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Figure 4

Plot of the error ε as a function of the voltage V applying the optimum values of n and J0 in the calculation of the current density of the right-hand side of Eq. 18

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Figure 5

Ideality factor as a function of the applied voltage for different values of the intrinsic layer thickness

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Figure 6

Saturation current density as a function of the applied voltage for different values of the intrinsic layer thickness

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Figure 7

Ideality factor as a function of the thickness of the intrinsic layer for different values of applied voltage

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