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Research Papers

Performance of In-Line Manufactured CdTe Thin Film Photovoltaic Devices

[+] Author and Article Information
R. A. Enzenroth1

Materials Engineering Laboratory, Department of Mechanical Engineering, Colorado State University, Fort Collins, CO 80523alenz@engr.colostate.edu

K. L. Barth, W. S. Sampath, V. Manivannan

Materials Engineering Laboratory, Department of Mechanical Engineering, Colorado State University, Fort Collins, CO 80523

1

Corresponding author.

J. Sol. Energy Eng 129(3), 327-330 (Apr 21, 2007) (4 pages) doi:10.1115/1.2742393 History: Received February 11, 2007; Revised April 21, 2007

In-line manufactured CdTe thin film photovoltaic devices were evaluated for their performance with respect to power conversion efficiency and reliability (stability). A National Renewable Energy Laboratory (NREL) certified power conversion efficiency (η) of 12.44% was measured for one CdTe device. A mean efficiency of 11.4% for 53 devices is shown. Results of reliability studies give a conservative estimate of 1% relative degradation per year in efficiency over a 20year lifetime for these CdTe devices.

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Copyright © 2007 by American Society of Mechanical Engineers
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Figures

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Figure 1

CdTe thin film PV device cross-section schematic (not to scale)

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Figure 2

NREL efficiency measurement of 12.44% device

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Figure 3

Histogram representing the distribution of power conversion efficiency of CdTe PV devices with a mean efficiency of 11.4% (53 devices from three fabrication runs)

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Figure 4

(a) Open circuit voltage (Voc) for devices processed over a long duration of system operation on same source charge of CdS, CdTe, and CdCl2; (b) Short circuit density (Jsc) for devices processed over a long duration of system operation on same source charge of CdS, CdTe, and CdCl2. Each data point is the average of either four or five devices; no data omitted.

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Figure 5

Indoor accelerated stress data for cells under the following stress conditions: cycled 1 Sun illumination (5h on∕3h off), 65°C, and open circuit bias

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Figure 6

Device stability of CdTe thin film devices under outdoor conditions and maintained at open circuit bias. Time at t=0 was after 156days when measurement procedure was changed.

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Figure 7

Accelerated stress performance of three groups of devices with the same processing parameters demonstrating repeatability of the process.

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