Research Papers

GaSb Crystals and Wafers for Photovoltaic Devices

[+] Author and Article Information
S. Luca, J. Rothman, J. P. Belle, C. Calvat, G. Basset, A. Passero

 Commissariat à l’Energie Atomique, LETI – MINATEC, 17 Rue des Martyrs, 38054 Grenoble Cedex 9, France

J. L. Santailler1

 Commissariat à l’Energie Atomique, LETI – MINATEC, 17 Rue des Martyrs, 38054 Grenoble Cedex 9, Francejean-louis.santailler@cea.fr

V. P. Khvostikov, N. S. Potapovich, R. V. Levin

 Ioffe Physico-Technical Institute, 26 Polytechnicheskaya, 194021 St. Petersburg, Russia


Corresponding author.

J. Sol. Energy Eng 129(3), 304-313 (Jul 19, 2006) (10 pages) doi:10.1115/1.2734570 History: Received December 09, 2005; Revised July 19, 2006

GaSb material presents interesting properties for single junction thermophotovoltaic (TPV) devices. GaSb:Te single crystal grown with Czochralski (Cz) or modified Czochralski (Mo-Cz) methods are presented and the problem of Te homogeneity discussed. As the carrier mobility is one of the key points for the bulk crystal, Hall measurements are carried out. We present here some complementary developments based on the material processing point of view: the bulk crystal growth, the wafer preparation, and the wafer etching. Subsequent steps after these are related to the pn or np junction elaboration. Some results obtained for different thin-layer elaboration approaches are presented. So from the simple vapor phase diffusion process or the liquid phase epitaxy process up to the metal organic chemical vapor deposition process we report some material specificity.

Copyright © 2007 by American Society of Mechanical Engineers
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Figure 1

As grown GaSb:Te crystal Se_127 grown by Cz process

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Figure 2

Carrier concentration (a) and Hall mobility (b) comparison of p and n type GaSb samples

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Figure 3

Hall measurements of free carrier mobility and concentration along n-GaSb ingots N91 and N93

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Figure 4

Free carrier (electron) mobility (a) and concentration (b) for n-GaSb (Te) wafer N36 from the ingot N93 in two perpendicular directions

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Figure 5

Resistivity versus position ⟨211⟩n type GaSb:Te sample Se_127 representing 50mm of the ingot

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Figure 6

Surface quality ⟨100⟩p type GaSb:Te sample Se_108

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Figure 7

Photoluminescence spectra of a p-GaSb wafer (4) and of epitaxial (LPE) p-GaSb layers of different thicknesses: 1–6μm, 2–10μm and 3–15μm

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Figure 8

Dependence of the charge carrier mobility on electron concentration in the epitaxial n-GaSb:Te layers at 300K

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Figure 9

The surface morphology of GaSb epitaxial layers (the morphology was estimated by means of electronic microscopes): (a),(b) sample 1; (c),(d) sample 2; (e),(f) sample 5

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Figure 10

The photoluminescence intensity versus the ratio of elements

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Figure 11

SIMS measurements on n-GaSb:Te sample Se_127 after Zn diffusion



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