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TECHNICAL PAPERS

The Femtosecond Energy Diffusion Sensor: A Non-contact Tool for Photovoltaic Characterization

[+] Author and Article Information
James T. McLeskey

Department of Mechanical Engineering, Virginia Commonwealth University, 601 W. Main St., Richmond, VA 23284-3015

Pamela M. Norris

Microscale Heat Transfer Laboratory, Department of Mechanical and Aerospace Engineering, University of Virginia, 122 Engineers Way, Charlottesville, VA 22904-4746

J. Sol. Energy Eng 127(1), 131-137 (Feb 07, 2005) (7 pages) doi:10.1115/1.1767991 History: Received June 01, 2003; Revised April 01, 2004; Online February 07, 2005
Copyright © 2004 by ASME
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References

Figures

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Structure of an a-Si solar cell
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Simplified band structure of a-Si
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Normalized TTT data of intrinsic 500 nm a-Si:H at different pump and probe energies ranging from 1.426 to 1.700 eV
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Residual values for a-Si:H, a-Si:P:H and a-Si:B:H single layer samples (500 nm each)
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Densities of states for each single layer sample as determined by the absorption model
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Experimental residual values for p-i-n junction build-up samples
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Residual values for p-layer. Points represent experimental data and the curve represents the absorption model.
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Densities of states for layers of p-i-n junction as determined by the absorption model and the multi-layer model
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Residual values for p- and i-layers. Points represent experimental data and the curves represent the absorption model and the multi-layer model.
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Residual values for p-i-n layers. Points represent experimental data and the curves represent the absorption model and the multi-layer model.
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Dark and light current—voltage curves calculated by AMPS-1D for the AMPS-1D p-i-n sample file and the p-i-n junction tested with the FED sensor

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