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TECHNICAL PAPERS

The Femtosecond Energy Diffusion Sensor: A Non-contact Tool for Photovoltaic Characterization

[+] Author and Article Information
James T. McLeskey

Department of Mechanical Engineering, Virginia Commonwealth University, 601 W. Main St., Richmond, VA 23284-3015

Pamela M. Norris

Microscale Heat Transfer Laboratory, Department of Mechanical and Aerospace Engineering, University of Virginia, 122 Engineers Way, Charlottesville, VA 22904-4746

J. Sol. Energy Eng 127(1), 131-137 (Feb 07, 2005) (7 pages) doi:10.1115/1.1767991 History: Received June 01, 2003; Revised April 01, 2004; Online February 07, 2005
Copyright © 2004 by ASME
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References

Goetzberger,  A.Luther,  J.Willeke,  G.2001, “Solar Cells: Past, Present, Future,”Sol. Energy Mater. Sol. Cells, 74, pp.1–11.
Carlson,  D. E., and Wronski,  C. R., 1976, “Amorphous Silicon Solar Cell,” Appl. Phys. Lett., 28(11), pp. 671–673.
Branz,  H. M., Asher,  S., Gleskova,  H., and Wagner,  S., 1999, “Light-Induced D Diffusion Measurements in Hydrogenated Amorphous Silicon: Testing H Metastability Models,” Phys. Rev. B, 59(8), pp. 5513–5520.
Carlson,  D. E., Arya,  R. R., Chen,  L. F., Oswald,  R., Newton,  J., Rajan,  K., Romero,  R., Willing,  F., and Yang,  L., 1997, “Commercialization of Multijunction a-Si Modules,” AIP Conf. Proc., 394.
Carlson, D., 2000, Private Communication, Unpublished.
McLeskey,  J. T., and Norris,  P. M., 2001, “Femtosecond Transmission Studies of a-Si:H, a-Sige:H, and a-Sic:H Alloys Pumped in the Exponential Band Tails,” Sol. Energy Mater. Sol. Cells, 69(2), pp. 165–173.
McLeskey,  J. T., and Norris,  P. M., 2003, “Femtosecond Transmission Studies of N-Type and P-Type Hydrogenated Amorphous Silicon Pumped in the Exponential Band Tails,” J. Non-Cryst. Solids, 318, pp. 254–261.
McLeskey, J., 2003, “Development of the Femtosecond Energy Diffusion Sensor for Use in the Manufacture of Amorphous Silicon Solar Cells,” Ph.D. thesis, University of Virginia, Charlottesville, VA.
Fauchet,  P. M., Hulin,  D., Migus,  A., Antonetti,  A., Kolodzey,  J., and Wagner,  S., 1986, “Initial Stages of Trapping in a-Si:H Observed by Femtosecond Spectroscopy,” Phys. Rev. Lett., 57(19), pp. 2438–2441.
Mott, N. F., and Davis, E. A., 1979, Electronic Processes in Non-Crystalline Materials, Clarendon Press, Oxford, 1979.
Spear, W. E., and LeComber, 1984, “Fundamental and Applied Work on Glow Discharge Material,” in The Physics of Hydrogenated Amorphous Silicon I: Structure, Preparation, and Devices, Lucovsky, G., eds., Spring-Verlag, New York, p. 79.
Kaplan, 1984, “Cvd Material,” in The Physics of Hydrogenated Amorphous Silicon I: Structure, Preparation, and Devices, Lucovsky, G., eds., Springer-Verlag, New York.
Carlson, D. E., 1984, “Solar Energy Conversion,” in The Physics of Hydrogenated Amorphous Silicon I: Structure, Preparation, and Devices, Lucovsky, G., eds., Springer-Verlag, New York, pp. 203–244.
Anderson,  D. A., and Paul,  W., 1982, “Transport Properties of a-Si:H Alloys Prepared by R. F. Sputtering Ii. The Effects of Doping,” Philos. Mag. B, 45(1), pp. 1–23.
Ackley,  D. E., Tauc,  J., and Paul,  W., 1979, “Picosecond Relaxation of Optically Induced Absorption in Amorphous Semiconductors,” Phys. Rev. Lett., 43(10), pp. 715–718.
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Figures

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Structure of an a-Si solar cell
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Simplified band structure of a-Si
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Normalized TTT data of intrinsic 500 nm a-Si:H at different pump and probe energies ranging from 1.426 to 1.700 eV
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Residual values for a-Si:H, a-Si:P:H and a-Si:B:H single layer samples (500 nm each)
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Densities of states for each single layer sample as determined by the absorption model
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Experimental residual values for p-i-n junction build-up samples
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Residual values for p-layer. Points represent experimental data and the curve represents the absorption model.
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Densities of states for layers of p-i-n junction as determined by the absorption model and the multi-layer model
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Residual values for p- and i-layers. Points represent experimental data and the curves represent the absorption model and the multi-layer model.
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Residual values for p-i-n layers. Points represent experimental data and the curves represent the absorption model and the multi-layer model.
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Dark and light current—voltage curves calculated by AMPS-1D for the AMPS-1D p-i-n sample file and the p-i-n junction tested with the FED sensor

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