In-Line Sputtering System for Depositing CuInSe2/CdS Heterojunctions

[+] Author and Article Information
J. A. Thornton, T. C. Lommasson, D. G. Cornog

Department of Materials Science and Coordinated Science Laboratory, University of Illinois, Urbana, Ill. 61801

J. Sol. Energy Eng 108(4), 259-266 (Nov 01, 1986) (8 pages) doi:10.1115/1.3268104 History: Received July 01, 1986; Online November 11, 2009


An in-line deposition system for fabricating all-sputtered CuInSe2 /CdS heterojunctions has been designed and fabricated. The system uses planar magnetron sputtering sources driven with direct currents. The apparatus consists of a vacuum interlock and four processing chambers. A vertically mounted frame containing four 25 mm × 25 mm substrates is introduced through a vacuum interlock and positioned at stationary deposition stations within each of the four processing chambers. One chamber is configured for depositing a metal base electrode. A second chamber contains a station for depositing CuInSe2 by reactive cosputtering from Cu and In sources in an H2 Se-Ar atmosphere. The final two chambers are configured for depositing a CdS layer consisting of two sublayers such, for example, as (CdZn)S and In-doped CdS which are deposited by reactive sputtering from Cd-alloy targets in an H2 S-AR atmosphere. The CuInSe2 deposition chamber is isolated from the base electrode and CdS deposition chambers by gate valves to minimize cross contamination. The system has now been operated for over a year with more than three hundred deposition runs having been made, using primarily the CuInSe2 deposition chamber. Solar cells with efficiencies up to 6 percent have been fabricated from reactive sputtered CuInSe2 layers deposited using the apparatus. The purpose of this paper is to describe the design and operation of the system.

Copyright © 1986 by ASME
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