Transfer of a Metal From a Transparent Film to the Surface of Silicon to Produce P-N Junction Solar Cells

[+] Author and Article Information
M. Toulemonde

Ciril-Ganil, 14040 Caen, France

J. C. Muller, B. Stuck

CRN Laboratoire PHASE, 67037 Strasbourg, France

J. Sol. Energy Eng 108(2), 102-104 (May 01, 1986) (3 pages) doi:10.1115/1.3268074 History: Received October 01, 1984; Online November 11, 2009


A new method is proposed for preparing silicon P -N junctions. The first consists in fixing a transparent plastic film coated with a thin layer of a conventional dopant on the surface of the wafer, then illuminating this sandwich with a higher power Q switched laser. Two successive pulses are used, the first being able to transfer the dopant from the film to the silicon surface, the second to induce a liquid phase diffusion incorporating the dopant into the silicon lattice. Solar cells have been prepared by using this process, implying several attractive features.

Copyright © 1986 by ASME
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